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Saniwave Technology Co., Ltd.
Website: www.saniwaveltd.com
Tel: +86-755-89216755
Fax: +86-755-89264521
E-mail: info@saniwaveltd.com
Address: 601, Building T, Hengyu Science
and Technology Park, No.1 Ruiji Road,
Longgang District, Shenzhen, China
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Epi Wafers |
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| Product >> Epi Wafers >> All categories |
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Number： |
92814141016 |
Name： |
Epi SiC Wafers |
Specifications： |
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Remarks： |
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Category： |
Epi Wafers |
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| Product description |
6 inch SiC Epi-Wafer Specifications
Property Before After
Diameter 150 ± 0,2 mm
Thickness 350 ± 25 mkm
Primary Flat Length 57,5 ± 1,5 mm
Surface Orientation Off-Axis: 4°toward <112̅ 0>±0.5°
Primary Flat Length <1-100> ±5,0°
Secondary Flat Length N/A
Dopant n-Type (Nitrogen)
Surface Finish Backside CMP
Wafer Edge Beveling
Dopant
1-st epitaxial layer (buffer layer) n-Type (Nitrogen)
Carrier concentration
1-st epitaxial layer (buffer layer) 5×1017cm-3 ±20% 5×1018 cm-3 ±20%
Thickness
1-st epitaxial layer (buffer layer) 1 mkm ±20% 2 mkm ±20%
Dopant
2-st epitaxial layer n-тип (азот)
Carrier concentration
2-st epitaxial layer 8×1015cm-3 ±12% 4×1015 cm-3 ±12%
Thickness
2-st epitaxial layer 10 mkm ±8% 15 mkm ±8%
Carrier concentration Uniformity σ/mеап (EE=5 mm)
2-st epitaxial layer ≤ 6 %
Thickness Uniformity σ/mеап (EE=5 mm)
2-st epitaxial layer ≤ 4 %
TTV ≤ 10 mkm
LTV ≤ 5 mkm
WARP ≤ 40 mkm
BOW ±25 mkm
Surface Roughness by AFM (20 mkm×20 mkm) Ra ≤ 0,50 nm
Surface Metal Contamination (Al, Hg, Na, K, Ca, Ti, V, Cr, Fe, Ni, Cu, Zn, Mn) less 5×1010cm-2
BPD ≤40 cm-2
Cracks None Permitted
Scratch оп frопt surface (total) ≤125 mm
Chips/Indents None Permitted ≥0.5mm Width and Depth
Usable аrеа(Зmm*3mm grid). Defect include but not limited “carrot”, “comet”, “downfall”, “triangle”, IGSF, BSF, “micropipe”, “larg pit”(size≥ 10 mkm) ≥90%
Usable аrеа(5mm*5mm grid). Defect include but not limited “carrot”, “comet”, “downfall”, “triangle”, IGSF, BSF, “micropipe”, “larg pit”(size≥ 10 mkm) ≥80%
VisuaI uncleanness Clean
Marking Back side (if necessary)
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| Click：13 Time：2026-09-28 【Print】 【Close】 |
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