Silicon Carbide Substrate Wafers

Diameter: 4", 6", 8"

Type: N type, Semi-insulated High Pufified

Grade: Dummy, Research, P-Mos

Silicon carbide wafers are mainly used for the production of Schottky diodes, metal oxide semiconductor field-effect transistors, junction field-effect transistors, bipolar junction transistors, thyristors, turn-off thyristors, and insulated gate bipolar transistors.